Method for depositing a platinum layer on a silicon wafer

ABSTRACT

The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, &#34;the mixture film&#34; to be referred as &#34;oxygen containing platinum thin-film&#34;); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400° to 1,300° C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stablize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.

BACKGROUND OF THE INVENTION

1. Field of the invention

The present invention relates to a platinum (Pt) deposition techniquefor depositing, as electrode material, a platinum thin-film or layer ona silicon wafers generally used in producing oxide thin-film devices orsemiconductors, and in particular to a method of forming a platinumthin-film on a silicon wafer substantially without using any glue layerand to a silicon substrate substantially free of any glue layer. Herein,the term, "silicon substrate" is used to indicate a silicon wafer, onwhich a platinum layer is deposited.

2. Description of the Prior Art

Nowadays, the thinning of dielectric, piezo-electric, super-conductive,and magnetic ceramic materials becomes a world-wide tendency in order tomeet the requirments of miniaturation, high density integration andfunctional elevation of electronic ceramic parts or devices. Forthinning ceramic materials, single crystal materials such as silicon,MgO, SrTiO₃, LaAlO₃, and sapphire, and poly-crystal materials such asalumina and diamond have been used as a substrate.

Among them, silicon single crystal wafers have been most widely used inconventional semiconductor production processes, since they can bereadily adopted to fabricate thin-film devices and circuits throughsubstrate design procedures and are much cheaper as compared with othersingle crystal wafers or poly-crystal diamond wafers.

When those silicon single crystal wafers are used in producing oxidethin-film devices, it is needed to form electrode layer(s) for eitherconnecting parts within the devices each other or connecting the devicesand external circuits, and/or for operating the devices.

Aluminium, cupper, platinum, conductive oxide (RuO₂), and etc. are usedas electrode materials. Aluminium is most widely used as a bottomelectrode material in conventional dynamic random access memory (DRAM)devices. For novel devices such as new genaration DRAM or ferro-electricrandom access menory (FRAM) devices, the capacity of which have beenraised to 1G to 4G bits, however, platinum will be used for the bottomelectrode materials when ferro-electric oxide materials of Perovskitestructure (BT: BaTiO₃, PZT: PbZr_(1-x) Ti_(x) O₃, PLZT: Pb_(1-x) La_(x)Zr_(1-y) Ti_(y) O₃, BST: Ba_(1-x) Sr_(x) TiO₃, etc.) having highdielectric constants or spontaneous polarization characteristics areused as materials for capacitors of those devices instead ofconventional SiO₂ /Si₃ N₄ group materials.

Since temperatures for forming the ferro-electric materials are high(700° C.) and exceed the temperature of 500° C., below which temperaturealuminium electrodes can be used, platinum electrodes which arethermally and chemically stable are more suitable than aluminumelectrodes. Furthermore, it is also possible to obtain thin films havingexcellent crystallization or orientation if platinum electrodes areused, since nucleation which is very important in a course of formingferro-electric materials can be initiated more readily on platinumlayers than on the other electrode materials.

Examples of well-known methods for depositing platinum thin-film areDC/RF magnetron sputtering, vacuum evaporation, metal organic chemicalvapor deposition (MOCVD), and ion plating methods. Among them, thevacuum evaporation method has a disadvantage that the adhesive strengthbetween a silicon wafer and a platinum layer is inferior and the MOCVDmethod has a disadvantage that impurities such as carbon may beintroduced into the platinum layer.

In the DC/RF magnetron sputtering method, if the deposition process isperformed under the inert atmosphere as known in the art, hillocks orvoids are formed during an annealing process performed after depositionor the other processes such as oxide deposition, since the adhesivestrength between the platinum layer and the silicon wafer (SiO₂ /Si) isnot good, and may result in a short of circuit and/or the compositionalinhomogeneity of oxides on the platinum layer. Furthermore, theinterface characteristics between oxide and platinum layers aredeteriorated.

In order to solve the above problems, there are generally used methodswhich interpose a material selected from Ti, Ta, TiN, etc. between aplatinum electrode layer and a wafer (SiO₂ /Si) to serve as a glue layeror methods which do not use platinum but use conductive oxides (RuO₂) aselectrode materials.

When Ti, Ta or TiN is used as a glue layer, the adhesive strength can beincreased at the time of deposition. However, there are serious problemsthat the surface roughness becomes deterioriated since the materials ofglue layer defuse into the platinum layer and react with oxygen, therebyforming oxides(TiO₂ /Ta₂ O₃), that functions of electrodes and/orconcections of upper and lower parts may be lost because of theformation of voids and hillocks, and that the adhesive strength isweakened at the end because of the loss of adhesive function due to theoxidation of the metals used as a glue layer.

In addition, if a conductive oxide such as RuO₂ is used for anelectrode, leakage currents of resultant devices are increased becausethe electrode surfaces are very rough, and the resistivity of the oxideis higher than that of a platinum-layer. A chemical reaction between theoxide and a ferro-electric oxide thin film may also be caused at theferro-electric film deposition process performed thereafter.

As noted above, there are many problems in using platinum as electrodematerial for oxide thin-film devices, but it is the real situation thatno solutions for those problems have been reported.

SUMMARY OF THE INVENTION

An object of the present invention is to dissolve the problems of theprior arts related to platinum thin-film formation.

In particular, it is an object of the present invention to provide asilicon substrate having a platinum thin-film substantially free of aglue layer which has been considered as essential in platinum thin-filmdeposition, wherein the adhesive strengths between the platinumthin-film and an insulating oxide deposited on the silicon wafer arehigher than those between a platinum layer and a glue layer interposedbetween the platinum layer and an insulating oxide formed on a siliconwafer and wherein neither voids nor hillocks are formed in the platinumthin-film in substantial.

The above objects of the present invention can be achieved by a processestablished by repeated experiments performed by the inventors.According to repeated experiments, it has been found that it is possibleto obtain unexpectedly fantastic results if a platinum thin-film isdeposited on a dielectric oxide layer on a silicon wafer through twoseparate steps, i.e., the first deposition step being performed under anoxidation atmosphere and the second deposition step being performedunder an inert atmosphere, and the silicon substrate is annealed in acertain range of temperatures following the second deposition step. Inother words, it has been found that it is possible to obtain a siliconsubstrate having good adhesive characteristics of the platinum thin-filmas compared with those obtained using any conventional processes andsubstatially or completely free of any defects such as voids or hillocksand any other problems of the prior arts caused when the platinumthin-films are deposited via a glue layer or directly on an insulatingoxide layer formed on a silicon wafer under an inert atmosphere.

In summary, the platinum thin-film deposition process of the presentinvention comprises the steps of:

i) providing a silicon wafer;

ii) forming an insulating oxide layer on a surface of the silicon wafer;

iii) depositing a platinum layer on the insulating oxide layer under anoxidation atmosphere to form a mixture film consisted of platinumgrains, platinum oxide grains and oxygen adhered to those grains(hereinafter, "the mixture film" to be referred as "oxygen containingplatinum thin-film");

iv) depositing an additional platinum thin-film to a desired thicknesson the oxygen containing platinum thin-film under a complete inertatmosphere; and

v) annealing the silicon substrate at a temperature of 400° to 1,300° C.in order to remove oxygen present in the independent form or in the formof platinum oxide within the oxygen containing platinum thin-film and tostablize the entire platinum thin-film.

The insulating oxide is SiO₂, Al₂ O₃ or MgO as well-known in the art,and SiO₂ is most preferable in view of the fact that it can be formedfrom simple annealing of a silicon wafer. Since the first platinumdeposition step is performed under an oxidation atmosphere according theabove process, oxygen is naturally absorbed into platinum thin-filmlayer and forms "oxygen containing platinum thin-film". Since this filmcontains oxygen, it has an increased affinity to the insulating oxidetherebelow and does not cause any problems met when platinum layer isdeposited on the insulating layer under an inert atmosphere. After this,the deposition of the additional platinum layer on "oxygen containgplatinum thin-film" under the inert atmosphere will result in theformation of good and pure platinum thin-film layer to a desiredthickness without any ploblems related to the prior arts as noted in theabove due to platinum to platinum combination between the oxygencontaining platinum thin-film and the additional platinum thin-filmlayer. It has been found that substantially all of oxygen present eitherin the independent form or in the form of platinum oxide in the oxygencontaining platinum thin-film is escaped therefrom by annealing thesilicon substrate after formation of the second platinum thin-filmlayer. It appears that this is resulted from the platinum'scharacteristics of lack of reactivity or affinity with other elements.

As can be understood from the above, the oxygen containing platinumthin-film layer serves as a glue layer during the second depositing stepof additional platinum thin-film layer and is converted into pureplatinum condition after the annealing step, whereby the siliconsubstrate produced according to the process of the present inventionsubstantially does not have any glue layer between the platinum layerand the dielectric layer of the silicon substrate. Since the oxygencontaining platinum thin-film layer temporarily serves as a glue layerbetween the pure platinum thin-film layer and the insulating oxidelayer, it is sufficient if the oxygen containing platinum thin-film isdeposited to cover the dielectric oxide layer. In this regard, thicknessof resulting platinum thin-film can be precisely controlled to a desiredlevel at the depositing step of the additional platinum layer under aninert atmosphere.

In addition, according to the inventors' finding, the oxygen containingplatinum thin-film can be formed using any conventional technique, forexample, DC/RF magnetron sputtering, vacuum evaporation, MOCVD and ionplating methods.

BRIEF DESCRIPTION OF THE DRAWINGS

The file of this patent contains at least one drawing executed in color:Copies of this patent with color drawing(s) will be provided by thePatent and Trademark Office upon request and payment of the necessaryfee.

For more complete understanding of the present invention, the presentinvention will be explained in detail with reference to the accompanyingdrawings, in which:

FIG. 1A is a flow chart of a conventional production process using a Ti,Ta or TiN glue layer during the step of sputtering deposition ofplatinum thin-film layer;

FIG. 1B is a flow chart showing a process according to a preferredembodiment of the present invention;

FIG. 2A is a cross-section view of a silicon substrate using a Ti, Ta,or TiN glue layer;

FIG. 2B is a cross-section view of a silicon substrate preparedaccording to a preferred embodiment of the present invention;

FIGS. 3A to 3C are electron microscope photographs of platinumthin-films formed according to the present invention, in which FIG. 3Ais 2,000x magnification photograph of the surface of platinum thin-film,FIG. 3B is similar to FIG. 3A but with 10,000x magnification photograph,and FIG. 3C is 20,000x magnification photograph of a cross-section ofplatinum thin-film;

FIG. 4 is an electron microscope photograph showing the microstructureof sample No. 11; and

FIG. 5 is an electron microscope photograph showing the microstructureof sample No. 12.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will be more specifically explained with referenceto FIGS. 1B and 2B.

The step of forming an insulating layer in FIG. 1B is a step of formingan insulating oxide (SiO₂) thin-film, alternatively an Al₂ O₃ or MgOthin film on a silicon wafer. According to the present invention, afterthe formation of insulating oxide layer, platinum thin-film depositionis performed thourgh two separate steps of different atmospheres. Thefirst deposition step is performed under an atmosphere including oxygenand inert gas (Ar, Kr, Xe), thereby "an oxygen containing platinumthin-film" rather than a pure platinum thin-film being deposited on theinsulating oxide layer. In this case, the expression "an atmosphereincluding oxygen and inert gas" covers the atmosphere containing oxygenin the amount of at least 10% volume and possibly the atmospherecontaining pure oxygen only. Oxygen naturally contained within theplatinum thin-film layer deposited under such an atmosphere will providea catalytic action increasing the adhesive strength between the oxygencontaining platinum thin-film and the insulating oxide. After theformation of the oxygen containing platinum thin-film, all of theatmosphere gases are extracted and inert gas such as argon is introducedinto the atmosphere to create an inert atmosphere. At the seconddeposition step, an additional pure platinum thin-film is deposited to athickness needed for electrodes under the inert atmosphere. Followingthis, the silicon substrate is annealed at a temperature in the range of400° to 1,300° C.. Since platinum of the oxygen containing platinumthin-film and platinum of the additional platinum thin-film are anidentical metal, there are no problems related to the adhesive strength,which occured when platinum was directly deposited on a dielectric layerformed from a material other than platinum. Furthermore, oxygen isremoved from the oxygen containing platinum thin-film layer during theannealing step, the oxygen containing platinum thin-film layer ischanged to a pure platinum thin-film substantially identical to theadditional platinum thin-film and the entire platinum thin-film isstablized. In this case, the annealing temperature is determineddepending on a desired electrode thickness and microstructure thereof.

A silicon substrate obtained from the above process is shown in FIG. 2Bin a cross-section view and electron microscope photographs thereof arepresented in FIGS. 3A to 3C, from which it can be apparently appreciatedthat the structures are substantially free of glue layers. It has beenfound that the silicon substrate according to the present invention hasoutstanding advantages in properties such as the adhesive strength ofplatinum thin-film and the like. These points will be discussed below inconnection with the results of experiments performed by the inventors.

EXAMPLE

Before the deposition step of oxygen containing platinum thin-film,silicon wafers were thermally treated for 3 to 5 hours at 1,200° to forma SiO₂ layer on silicon wafers.

Although there are many processes for forming silicon oxide (SiO₂),e.g., thermal oxidation, annodization, sputtering, chemical vapordeposition, thermal decomposition of silicon compounds, etc., dryoxidation which is one of thermal oxidation processes was used to formsilicon oxide.

Using silicon wafers provided with a silicon oxide layer by theabove-mentioned process, the first deposition of platinum was performedunder the condition as indicated below and an oxygen containing platinumthin-film to temporarily serve as a glue layer was deposited on wafers.(A platinum target with 99.99% purity and of the 4-inch diameter wasused and the angle between the target and the silicon wafer was 30°).

Basic pressure: 2×10⁻⁶ Torr

Sputtering pressure: 10 mTorr

Atmosphere: Ar+O₂ (Ar/O₂ composition ratio: 3/7)

Wafer temperature: room temperature

Revolution velocity of wafer: 5 rpm

Rf power: 150W

Distance between target and wafer: 13 cm

Deposition time: 1 minute

Oxygen and argon gases were introduced into a vacuum chamber to form anoxidation atmosphere and RF power was supplied to platinum target,thereby an oxygen containing platinum rather than pure platinumthin-film being deposited on the wafer due to oxygen contained withinthe atmosphere and admixed into the first deposited platinum layer. Aswell known in the art, during the sputtering process, a part ofatmospheric gases are ionized and impinged to the platinum target. As aresult, platinum atoms are run out and deposited together with oxygenwithin the oxidation atmosphere on an object being processed, so that"oxygen containing platinum thin-film" partially containing platinumoxide and partially containing oxygen within voids present betweenplatinum grains can be formed on the object.

And, the second layer platinum thin-film was deposited on the oxygencontaining platinum thin-film formed as discussed in the above under thefollowing conditions:

Sputtering pressure: 10 m Torr

Atmosphere gas: argon

Wafer temperature: room temperature

Revolution velocity of substrate: 5 rpm

DC power: 200 W

Distance between target and wafer: 13 cm

Diposition thickness: required electrode thickness

A difference between the first and second deposition steps is theatmosphere gases used during sputtering. Specifically, at the firstdeposition, a mixture gases of oxygen and argon was used, while at thesecond deposition, argon gas was used only. Therefore, at the firstdeposition, mixed phases of platinum, oxygen admixed to platinum andplatinum oxide were formed, while pure platinum thin film was formed atthe second deposition.

Thereafter, silicon substrates prepared as explained in the above wereannealed at 400° to 1,300° C. in the air using an electric furnace toremove oxygen from the oxygen containing platinum layers which served asa glue layer, and thereby a pure platinum thin-film as shown in FIGS. 3Ato 3C was obtained. This annealing may be referred as post-annealing.Annealing temperatures and times can be changed depending on desiredelectrode thicknesses and microstructure thereof. In the case of siliconwafer, the upper limit of post-annealing temperature was determined to1,300° C. since its melting point is 1,410° C.

Using platinum thin-films formed in accordance with the process of thepresent invention, platinum thin-films formed under a inert atmospherewithout using a glue layer, and platinum thin-films formed by a processusing Ti as a glue layer, resistivities and adhesive strengths ofplatinum thin-films were measured and the results thereof are indicatedin Table 1. Scotch Tape test(STT) which has been generally used as aadhesion power test was also carried out using 3M tape. In measuringresistivities, the 4-point probe method was used and in measuring theadhesive strength, the scratch test method was used.

                                      TABLE 1                                     __________________________________________________________________________    sample                                                                            deposition                                                                          post-  resistivity                                                                        adhesion                                                                           STT Formation of                                   No. atmosphere                                                                          annealing                                                                            (μΩ · cm)                                                        strength                                                                           results                                                                           voids/hillocks.                                __________________________________________________________________________    #1  Ar + O.sub.2 /Ar                                                                     400° C., 2 hr                                                                15.21                                                                              ≧20.7                                                                       pass                                                                              X                                              #2  Ar + O.sub.2 /Ar                                                                     600° C., 2 hr                                                                12.57                                                                              ≧20.9                                                                       pass                                                                              X                                              #3  Ar + O.sub.2 /Ar                                                                     700° C., 2 hr                                                                11.95                                                                              ≧20.7                                                                       pass                                                                              X                                              #4  Ar + O.sub.2 /Ar                                                                     800° C., 2 hr                                                                12.46                                                                              ≧20.9                                                                       pass                                                                              X                                              #5  Ar + O.sub.2 /Ar                                                                     900° C., 2 hr                                                                12.74                                                                              ≧20.9                                                                       pass                                                                              X                                              #6  Ar + O.sub.2 /Ar                                                                    1000° C., 2 hr                                                                13.39                                                                              ≧21.85                                                                      pass                                                                              X                                              #7  Ar + O.sub.2 /Ar                                                                    1300° C., 2 hr                                                                14.12                                                                              ≧23.6                                                                       pass                                                                              X                                              Comparative examples                                                          #8  Ar    un-done                                                                              11.78                                                                              14.44                                                                              fail                                                                              ◯                                  #9  Ar    un-done                                                                              15.35                                                                              5.32 fail                                                                              ◯                                  #10 Ar    un-done                                                                              0    0    fail                                                                              ◯                                  #11 Ar    1000° C., 2 hr                                                                0    5.13 fail                                                                              ◯                                  #12 Ar/Ar  700° C., 1 hr                                                                19.99                                                                              0    pass                                                                              ◯                                  __________________________________________________________________________     Notes.                                                                        Ar + O.sub.2 /Ar: A part of the platinum layer being deposited under the      atmosphere of argon and oxygen mixture and the remainder being deposited      under the argon atmosphere to the thickness needed for an electrode.          Ar: platinum layer being deposited under the argon atmosphere to the          thickness needed for a electrode.                                             Ar/Ar: platinum layer being deposited under the argon atmosphere on a Ti      layer deposited under the argon atmosphere before platinum layer              deposition and used as a glue layer for the platinum layer.                   "Pass" indicated that platinum layers were not peeled and "fail" indicate     that platinum layers were peeled.                                             "◯" indicates formation of voids and/or hillocks and "X"          indicates no formation of voids and hillocks.                            

Sample Nos. 1 to 7 were obtained from the process of the presentinvention forming an oxygen containg platinum thin-film to serve as aglue layer and annealing the film at a temperature within the range of400° to 1,300° C. for 2 hours. Sample No. 8 was obtained by depositionunder the inert gas (argon) atmosphere, using a silicon wafer heated to900° C.; sample No. 9 was obtained by deposition under the inert gas(argon) atmosphere, using a silicon wafer heated to 300° C.; sample No.10 was obtained by deposition under the inert gas (argon) atmosphereusing a silicon wafer, the temperature of which is the normaltemperature; and sample No. 11 was obtained using sample No. 10, inwhich the sample was annealed at 1,000° C. for 2 hours. Sample No. 12was obtained from a deposition process, in which at first, a Ti thinlayer was deposited as a glue layer on a silicon wafer under the inertgas atmosphere, a platinum layer was deposited on the Ti thin layer, andthe sample was annealed at 700° C. for 1 hour.

In summary, sample Nos. 1 to 7 have platinum layers deposited by theprocess of the present invention, sample Nos. 8 to 11 have platinumlayers deposited by conventional processes without using glue layers,and sample No. 12. has a platinum layer also formed from a conventionalprocess which includes an annealing step and uses a Ti glue layer.

As can be seen from Table 1 and FIGS. 3A to 3C, platinum layers formedfrom the process of the present invention exhibit superior adhesivestrengths as compared with those formed from the other processes, showno voids and hillocks and have uniform grains.

It appears that the adhesive strengths of sample Nos. 8 to 11 formedfrom conventional processes without using a glue layer can be increasedsomewhat if the temperatures of wafers at deposition are high or if thedeposition process is carried out at the normal temperature andthereafter the substrates are post-annealed. However, the adhesivestrengths cannot be increased to the level of those formed from thepresent invention. Furthermore, if the substrates are post-annealed,voids and/or hillocks appeared during the stress relief and grain growthof platinum layers and therefore the platinum layer become inappropriateto be used for electrodes. (If a ferro-electric oxide film is depositedon a platinum layer having voids, compositional inhomogeneity and shortcircuits will be caused. For this reason, it is known that it is notpossible to post-anneal platinum electrodes until now).

Furthermore, although the known platinum layer deposition process usinga Ti glue layer may greatly increase the adhesive strength, thesubstrates formed from the process is found to have a problem that theTi layer under the platinum layer is diffused during the post-annealingprocess and forms hillocks and TiO₂ on the surface of the platinumlayer.

The results of the above examples are obtained using platinum layersdeposited from the DC/RF magnetron sputtering method. However, the otherexperiments by the inventors showed that the first platinum layersformed using known vacuum evaporation, MOCVD and ion plating methods canprovide substantially same results, especially in adhesivecharacteristics, only if those processes are carried out under anoxidation atmosphere. Furthermore, although the oxidation atmosphere ofthe above example contains 3/7 of Ar/O₂ compositional ratio, additionalexperiments showed that if the oxidation atmosphere contains extremelysamll quantities of oxygen, i.g. 1/9 of At/O₂ compositional ratio orextremely high quantities of oxygen, i.g. 100% oxygen, the effectsintended by the present invention can be obtained.

As can be appreciated from the above, if the platinum deposition processis divided into two separate deposition steps and the first step iscarried out under an oxidation atmosphere and the second step is carriedout under an inert atmosphere, the adhesive strengths of platinum layerscan be highly increased but voids and/or hillocks do not appear. Yet,the resistivity values of the platinum layers are substantally same withthat of pure platinum.

Of course, it is possible to deposit one or more films such as siliconintegrated circuit films, ferro-electric films, magnetic films,piezo-electric films and dielectric films on the platinum layerdeposited using the process of the present invention as explained in theabove.

Although techniques for depositing platinum layers for electrodematerials are explained, it is obvious to those skilled in the art thatthose platinum layers can be used as electrodes of silicon integratedcircuits, ferro-electric, magnetic, piezo-electric, or dielectricthin-film devices, as explained in the beginning of the specification.In addition, it is also possible to form desired circuit devices bydepositing one or more films selected among silicon integrated circuitfilms, ferro-electric films, magnetic films, dielectric films on theplatinum layer, and etching those films together with the platinum thin-film layer into a desired circuit pattern. In particular, it is wellknown in the art that BT (BaTiO₃), platinum PZT(PbZr_(1-x) Ti_(x) O₃)PLZT(Pb_(1-x) La_(x) Zr_(1-y) Ti_(y) O₅), BST(Ba_(1-x) Sr_(x) TiO₃) etc.can be used for ferro-electric or high dielectric films and that theknown processes such as photolithography and the like can be used as aetching process.

What is claimed is:
 1. A method for depositing a platinum film on asilicon wafer comprising the steps of:i) providing a silicon wafer; ii)forming an insulating oxide layer on a surface of the silicon wafer;iii) depositing a platinum layer on the insulating oxide layer under anoxidation atmosphere to form a mixture film consisting of platinumgrains, platinum oxide grains and oxygen adhered to those grainshereinafter, "the mixture film" to be referred as "oxygen containingplatinum film"); vi) depositing an additional platinum film to athickness on the oxygen containing platinum film under a complete inertatmosphere; and v) annealing the silicon substrate at a temperature of400° to 1,300° C. in order to remove oxygen present in independent formor in platinum oxide form within the oxygen containing platinum film andto stablize the entire platinum film; whereby, after the step v), theoxygen containing platinum layer formed at the step iii) is changed intoa platinum layer substantially free of oxygen.
 2. A method according toclaim 1, wherein the oxide layer formed at the step ii) is selected fromthe group consisting of SiO₂, Al₂ O₃, and MgO.
 3. A method according toclaim 1, wherein the oxidation atmosphere comprises oxygen only or mixedoxygen and inert gases.
 4. A method according to claim 1, wherein thestep iii) is carried out by DC/RF sputtering method.
 5. A methodaccording to claim 1, wherein the step iii) is carried out by vaccumevaporation method.
 6. A method according to claim 1, wherein the stepiii) is carried out by MOCVD method.
 7. A method according to claim 1,wherein the step iii) is carried out by ion plating method.
 8. A methodof fabricating a semiconductor device or sensor device substantiallyfree of glue layer, having an insulating oxide layer formed on a siliconwafer and a platinum thin film on the oxide layer comprising thesteps:i) providing a silicon wafer; ii) forming an insulating oxidelayer selected from a group consisting of SiO₂, Al₂ O₃, and MgO on asurface of the silicon wafer; iii) depositing a platinum layer on theinsulating oxide layer under an oxidation atmosphere to form a mixturefilm consisted of platinum grains, platinum oxide grains and oxygenadhered to those grains (hereinafter, "the mixture film" to be referredto "oxygen containing platinum film") iv) depositing an additionalplatinum film to a thickness on the oxygen containing platinum filmunder a complete inert atmosphere; v) annealing the silicon substrate ata temperature of 400° to 1,300° C. in order to remove oxygen present inindependent form or in platinum oxide form within the oxygen containingplatinum film and to stabilize the entire platinum film; vi) depositingone or more films among silicon integrated circuit films, ferro-electricfilms and high dielectric films over the platinum film; and vii) etchingthe films deposited in accordance with step vi) and the platinum film toform a desired circuit pattern.
 9. A method according to claim 8,wherein the ferro-electric or high dielectric films are selected from agroup consisting of BT(BaTiO₃), PT (PbTiO₃), PZT(PbZr_(1-x) Ti_(x) O₃),PLZT(Pb_(1-x) La_(x), Zr_(1-y) Ti_(y) O₃), BST(Ba_(1-x) Sr_(x) TiO₃) andY1.
 10. A method according to claim 1, wherein the step iv) is carriedout by DC/RF sputtering.
 11. A method according to claim 1, wherein thestep iv) is carried out by vacuum evaporation.
 12. A method according toclaim 1, wherein the step iv) is carried out by MOCVD.
 13. A methodaccording to claim 1, wherein the step iv) is carried out by ionplating.